High quality factor of AlN microdisks embedding GaN quantum dots
نویسندگان
چکیده
منابع مشابه
High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots.
We compare the quality factor values of the whispering gallery modes of microdisks (μ-disks) incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor resonant modes on the whole spectrum, which allows us to identify the different radial mode families and to co...
متن کاملOptical study of GaN nanowires and GaN/AlN microcavities
This work focuses on the optical study of GaN nanowires and AlN microcavities containingGaN quantum dots. The 1-meV linewidth of the neutral donor-bound exciton line in thephotoluminescence spectrum of MBE-grown GaN nanowires evidences that the strain ishomogeneous in the material. These nanowires do not exhibit any excitonic confinement, butthe efficient strain relaxation allow...
متن کاملMiniband formation engineering in GaN/AlN constant total effective radius multi-shells quantum dots and rings with on-center hydrogenic donor impurities
In this work, we have studied the miniband and minigaps of GaN/AlN constant total effective radius multi-shells quantum dots (CTER-MSQDs) and Rings (CTERMSQRs).We have investigated effects of the Hydrogenic donor impurities, quantum dots and rings radii, and the number of wells on miniband formation by sub-band energy calculations. We show that in these systems, minigaps can be created and then...
متن کاملExciton and biexciton luminescence from single GaN/AlN quantum dots in nanowires.
We present a microphotoluminescence study of single GaN/AlN quantum dots embedded in single nanowires. At low excitation power, single exciton lines with full width at half-maximum as narrow as 1 meV are observed. The study of the excitation power dependence of the emission allows us to identify the biexciton transitions with binding energies ranging from 20 to 40 meV.
متن کاملExcitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite ~WZ! and zinc-blende ~ZB! crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conductionand valence-band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it h...
متن کامل